低维材料异质结构建的器件是高性能微纳器件的研究前沿，栅极能带调控是器件性能提升的重要策略，其中纳米线栅极是局域化高效调控二维材料电学性能的手段。常规纳米线栅极制造的生长法工艺复杂、分散组装法性能不稳定，现有纳米线栅极构型往往材料种类受限，且纳米线栅极对器件能带的局域化调控及其影响机制的研究鲜有报道。针对上述问题，本文提出纳米线栅极器件的飞秒激光纳米连接高效制造新方法，构建了纳米线栅极对器件能带局域化调控的模型，设计并制造了3类高性能纳米线栅极器件，研究了其性能调控规律。主要成果如下：首先，通过理论计算构建了纳米线栅极的电场电势分布理想模型，基于模拟仿真引入最高电势/电场强度的A类修正系数、电势/电场强度下降速度的C类修正系数，建立了器件沟道材料的厚度、封装结构、纳米线半径、绝缘层材料及厚度对电场电势分布的影响关系，阐明了纳米线栅极能带调控的局域化特性，进一步推导获得了介电质电容（Cox）计算公式；确立了降低构型界面电容（Cit）和增大构型Cox为提升能带调控能力关键策略，为纳米线栅极构型器件的设计提供了依据。基于上述局域化能带调控模型与策略及飞秒激光纳米连接，构建了基于h-BN封装结构和ZnO纳米线栅极调控的MoS2-Au肖特基结器件。研究了飞秒激光能量密度和辐照时间对连接界面的影响，28 mJ/cm2能量密度30 s辐照优化工艺下可获得40.4 pF的低Cit，实现了肖特基器件的局域能带高质量调控并阐明了其调控机理，研制了探测度1.4×1013Jones的单栅调控光电探测器，解决了常规顶栅构型中的入射光损失或背栅构型中的静电屏蔽问题，并对比阐明了其本质原因。为进一步实现器件兼具写入和擦除功能，构建了基于辅助氧化POx封装结构及ZnO纳米线栅极与背栅双栅耦合能带调控的黑磷器件。研究了激光参数对黑鳞氧化和界面连接的影响，24.1mJ/cm2能量密度120s辐照优化参数下可获得607pF的低Cit，实现了器件局域和全局能带的耦合高质量调控并阐明了双栅调控机制，成功研制了具有快速写入与擦除功能的三端突触器件。为实现器件的可变逻辑功能，构建了基于纳米线壳层SiO2封装结构及2个SiC纳米线栅极与背栅多栅耦合调控的MoS2器件。研究了激光参数对纳米线局域减薄和界面连接的影响，29mJ/cm2能量密度180s辐照优化参数可获得9.1pF的低Cit，实现了器件能带结构的定制化设计并揭示了多栅调控机制，器件可实现“或”和“与”逻辑切换及单逻辑单元多逻辑输入，可大幅减少逻辑单元数量。

High-performance micro and nano devices based on heterostructures of low dimensional materials are the research frontiers. The energy band control by gates is an important strategy to improve the device performances, and among them, the nanowire gate is a means to effectively control the electrical properties of two-dimensional materials locally. However, in most cases, reported nanowire gate structures only use single nanowire material as gate, exhibit simple arrangement and involve limited material types. In addition, few studies on the mechanism and local tuning ability of nanowire gate have been carried out, and problems of the fabrication of nanowire gates still exist such as complex manufacturing process, poor contact and unstable properties. In order to solve the above problems, a novel femtosecond laser nanojoining manufacturing method of nanowire gate devices is proposed in this paper. Based on this, the mechanism of nanowire gates and the local tuning models are proposed. Three different types of high-performance nanowire gate devices are designed, manufactured and researched. The main results of the study are as follows:Firstly, the ideal model of electric field potential distribution of nanowires gate is constructed through theoretical calculation. Based on simulation results, correction coefficient A for the highest electric field density and correction coefficients C for the decreasing speed of electric field density were introduced to the model, and the relationship between the thickness of the device channel material, encapsulating structure, nanowire radius, insulating layer thickness, insulating layer material and the electric field potential distribution is illustrated in equations. In this model, the effected regions by the nanowire gates are highly localized under the nanowire, and a formula of dielectric capacitance (Cox) is derived by this theory. Reducing interface capacitance (Cit) and increasing Cox of the nanowire gate configuration are the key strategies to improve the energy band control ability in this model, which provides a basis for the design of nanwire-gate configuration devices.Based on the above nanowire gate model, band control strategy and femtosecond laser nanojoining, ZnO nanowire gates are integrated into MoS2-Au Schottky junction with encapsulated h-BN to improve the photodetection performances of the devices. The influence of femtosecond laser power density and irradiation time on the interface is studied. The low Cit of 40.4 pF can be obtained under the optimal irradiation process of laser fluence of 28 mJ/cm2 for 30 s. The local energy band control of Schottky devices is realized and the tuning mechanism by nanowire gates is expounded. A single-gate photodetector with a detectivity of 1.4×1013 Jones is developed and this configuration solves the problem of incident light loss in the conventional top-gate configuration or electrostatic shielding in the back-gate configuration.To realize both writing and erasing of memory, BP-based synaptic devices are fabricated by integrating ZnO nanowire gate into BP device with encapsulated oxidized POx. The influence of laser parameters on BP oxidation and nanojoining is studied. Under the optimized parameters of laser fluence of 24.1 mJ/cm2 for 120 s irradiation, a low Cit of 607 pF is obtained. High-quality control of local and global energy bands by is realized by coupling nanowire gate with back gate, and the dual-gate tuning mechanism is clarified. A three-terminal synaptic device with rapid writing and erasing is successfully developed.To realize the changable logic of the device, the MoS2 device is constructed by integrating multiple SiC@SiO2 nanowire gates and the back gate. The influence of laser parameters on the local thinning and nanojoining of nanowires is studied. The optimized parameters of laser fluence of 29 mJ/cm2 for 180 s irradiation is suitable for low Cit of 9.1 pF, which realizes the customized design of the device band structure. In addition, multi-gate tuning mechanism is revealed. The device based on this configuration can be used as logic units, and the logic can be switched between “OR” and “AND” by changing bias of the back gate. This device can realize single logic unit with multiple logic input, which will possibly greatly reduce the number of logic units in electronic devices.