在集成电路制造中，随着特征尺寸的降低，对于工艺的要求更加严苛。化学机械抛光是目前行业公认的唯一可实现全局平坦化的工业化技术。抛光垫作为该工艺耗材中直接与晶圆需抛光表面接触的部分，其本身的粗糙峰与其所承载的另一耗材——抛光液及其中抛光颗粒直接影响了晶圆的抛光去除率等抛光效果，同时抛光垫也承担了运出抛光磨削所产生的废料的功能。随着抛光的进行，抛光垫表面形貌与粗糙峰高度分布均有可能产生变化，因此需引入修整以保持抛光垫在使用寿命过程中性能的稳定性。本课题研制了一台化学机械抛光表界面在线监测设备，该设备包含一工业级300mm晶圆化学机械抛光平台，集成了激光共聚焦显微镜、红外热像仪、点温度传感器等模块，可采集抛光垫表面顶层沟槽深度、表面粗糙峰高度分布、表面温度及抛光盘与修整器等的抛光过程扭矩。针对抛光垫修整所导致宏观尺度下的表面形貌变化，构建了运动学模型，该模型能够较好地预测修整去除率规律，并进行工艺参数优化指导，得到了工艺实验验证并进一步测出修整去除率的量级与影响参数；针对修整所导致的非平坦抛光垫表面形貌，构建了静力学模型，力学性能试验得出了顶层抛光垫为聚氨酯情况下的超弹体本构模型，模拟出了晶圆表面受力情况，分析了非平坦抛光垫表面形貌对抛光效果的影响。针对抛光垫修整所导致的微观尺度下的粗糙峰高度分布变化及其对抛光去除率的影响，开展了不同参数设定下的工艺实验，研究了表面粗糙度功能参数与抛光去除率的关系，并探究了修整器平均有效扭矩与抛光去除率的关系。由抛光垫表面粗糙峰高度分布进一步探究了其与晶圆、保持环、修整碟之间的相互作用机理及由此导致的摩擦生热而引起的抛光垫表面温度变化。系统分析了不同参数对该热场的具体影响规律，并通过控制抛光液供给温度的方法确定了温度变化对不同制程（氧化硅与钨镀层晶圆抛光）抛光去除率的影响情况。对于抛光垫宏观尺度下的表面形貌与微观尺度下的粗糙峰高度分布的相关在线研究，有利于系统性理解抛光垫在化学机械抛光中所承担的功能，并进一步明白抛光垫修整在工艺效果控制中所起到的具体作用，以上研究为化学机械抛光设备的开发设计与工艺的控制优化提供了理论依据与技术指导。

In integrated circuit manufacturing, as the feature size decreases, the requirements for the process control become more stringent. Chemical mechanical polishing is currently recognized as the only industrialized technology in the industry that can achieve global planarizaiton. In the chemical mechanical polishing process, the performance and stability of the consumables themselves greatly affect the process results. The polishing pad, one of the consumables, directly contacts the wafer surface to be polished, its own asperities and the other consumable it carries - the polishing slurry and the polishing particles inside it, directly affect the material removal rate and other polishing effects of the process. At the same time, the polishing pad also bears the function of transporting the waste generated by the polishing or grinding process. As polishing progresses, the surface topography and asperity height distribution of the polishing pad may change, so it is necessary to introduce conditioning to maintain the stability of the polishing pad‘s performance during its service life.This project has developed and built an online monitoring device for chemical mechanical polishing pad surface, which includes an industrial grade 300mm-wafer chemical mechanical polishing platform. It integrates modules such as a laser confocal microscope, an infrared thermal imager, a point temperature sensor, etc. It can collect the depth of the top pad groove on the polishing pad surface, the distribution of surface asperity height, surface temperature, and the polishing process torque of conditioner and platen.A kinematic model was constructed to predict the surface topography changes at the macro scale caused by conditioning. This model can effectively predict the pattern of pad cut rate and provide guidance for process parameter optimization. The verification experiment was conducted and further measurement of the magnitude and influencing parameters of pad cut rate was taken. Meanwhile, a static model was constructed to investigate the influence of polishing pad surface non-uniformatiy caused by conditioning on the polishing effects. Mechanical porperties tests were conducted to obtain a constitutive model of the elastomeric material in the case of polyurethane as the top pad. The contact stress on the wafer surface was simulated, and the impact of the polishing pad surface non-uniformatiy on the polishing effects was analyzed.In response to the changes in the asperity height distribution at the micro scale caused by conditioning and its impact on the material removal rate, we conducted experiments under different parameter settings to investigate the relationship between functional surface roughness parameters and the material removal rate, as well as the relationship between the average effective torque of the conditioner and material removal rate.The interaction mechanism between the polishing pad surface asperity height distribution and the wafer, the retaining ring, and the conditioning disk, as well as the temperature changes on the polishing pad surface caused by frictional heat generation, were further explored. The specific impact of different parameters on the thermal field was systematically analyzed, and the influence of temperature changes on the material removal rate of different processes (silicon oxide and tungsten coated wafer polishing) was determined by controlling the polishing slurry supply temperature.The on-spot research on the surface topography of polishing pads at the macro scale and the surface asperity height distribution at the micro scale is conducive to a systematic understanding of the functions of polishing pads in chemical mechanical polishing, and further understanding the specific role of polishing pad conditioning in process effect control. The above research provides theoretical basis and technical guidance for the development and design of chemical mechanical polishing equipment and process optimization.