随着信息化的不断发展，物联网覆盖范围越来越广，设备数量越来越多。无线通信是物联网设备的重要功能，基于Wi-Fi和蓝牙的无线收发机功耗高，其中射频前端的功耗占据很大比例，已经成为影响物联网设备续航时间的瓶颈。标准协议中的超宽带协议和自定义协议在能量效率方面具有优势，适合物联网的低功耗无线通信使用。本文分别对于802.15.4超宽带协议和自定义协议，设计了两款无线收发机的射频前端：覆盖UWB频带5，6，8，9，10的超宽带收发机射频前端电路，和600MHz频带的自定义协议收发机射频前端电路。其中每个电路均包含低噪声放大器、下变频混频器、上变频混频器、功率放大器、天线开关模块。针对超宽带射频前端的多频带支持和低功耗需求，本文采用降低LNA噪声系数的改良\pi型匹配网络、改善功率放大器性能的片上变压器耦合和多栅晶体管技术等，在1.1V电压的40nm工艺下实现了22dB增益、3.22dB噪声系数的LNA、最大输出功率10dBm的功率放低功耗的同时保证了超宽带射频前端的性能，并通过采用全片上方案提高了系统的集成度。针对自定义协议收发机射频前端的灵活性和低功耗的需求，本文采用了提高低噪声放大器的漏极电流注入技术、提高线性度的折叠互补输入混频器技术等，在1V电压的65nm工艺下设计了增益为27dB的高增益低噪声放大器，抑制了接收链路的噪声；通过折叠混频器结构在-25dBm以上的信号幅度下抑制了发射机中CIM3交调分量的影响。本文所设计的超宽带射频前端面积为1615微米*681微米，总面积约1.1平方毫米，共包含1T3R。后仿结果发射前端功耗为44.9mW，接收前端功耗为6.73mW，与同类产品相比具有显著优势。所设计的600MHz自定义协议收发机，其射频前端面积为730微米*362微米。其芯片总面积约为长2.58mm，高2.24mm，采用65nm CMOS工艺流片。后仿和测试结果互相验证显示，射频前端功耗为发射4.87mW，接收0.32mW。
With the development of informatization, Internet of Things is covering wider and the number of devices is increasing. Wireless communication is an important function of IoT devices. Wireless transceivers based on Wi-Fi and Bluetooth have high power consumption, in which RF front-end power consumption accounting for a large proportion. This already becomes a bottleneck affecting the battery life of IoT devices. UWB protocols in standard protocols and custom protocols have advantages in energy efficiency, which are suitable for low-power wireless communication usage in IoT.This paper designs two wireless transceiver RF front-ends for 802.15.4 UWB protocol and customed protocol, including an RF front-end circuit covering UWB bands 5, 6, 8, 9, 10 and an RF front-end circuit for a customed protocol operating at a frequency band of 600MHz. Each circuit includes low-noise amplifiers (LNAs), down-conversion mixers, up-conversion mixers, power amplifiers, and antenna switch modules.To meet the multi-band support and low-power requirements of UWB RF front-ends, this paper adopts techniques such as improving LNA noise figure using modified π-type matching networks and enhancing power amplifier performance through on-chip transformer coupling and multi-gate transistor technology. This design achieves a gain of 22dB with LNA noise figure at 3.22dB under a source voltage of 1.1V in a 40nm process while ensuring low-power operation to maintain performance without compromising on energy efficiency by full chip integration solution.For flexibility and low-power demands, this paper utilizes leakage current injection technique to improve LNAs‘ noise performance. Folded complementary input structure is used to enhance better linearity by suppressing CIM3 intermodulation distortion components affecting transmitter operation. Also an LNA with 27dB gain is realized in a 65nm process.The designed UWB frontend occupies an area size approximately 1615\mu m\times681\mu m, totaling around {1.1mm}^2 including three transmit-receive antennas (1T3R). Power consumption is 6.73mW for receivng and 44.9 mW for transmitting, whhich exceeds competitors significantly.For 600MHz customized protocol transceiver, the chip‘s dimension is about 730\times362\mu m. The whole chip is 2.58\times2.24\mu m and was manufactured in 65nm CMOS. The simulation and test results show that power consumption is 0.32mW for receivng and 4.87 mW for transmitting.
