在大数据的背景下，随着人工智能和物联网的快速发展，人类社会逐步进入到万物互联智能时代，导致接入设备和数据量的快速增加，引起器件功耗不断攀升。磁性绝缘体具有存储信息的非易失性和不引入电荷传递信息的特征，有利于实现低功耗的目标。反铁磁绝缘体器件具有高密度、高速度和抗干扰的优势，同时兼具绝缘体的低功耗特点，因此，反铁磁绝缘体中的自旋输运行为是领域内的核心内容。本文立足于反铁磁绝缘体中的自旋传输，通过构筑反铁磁纵向异质结以及电学操控反铁磁耦合的亚晶格磁矩，进而联合实现电学操控反铁磁垂直自旋传输。从反铁磁功能薄膜的纵向堆叠角度，设计并制备了全反铁磁绝缘体垂直异质结构α-Fe2O3/Cr2O3/α-Fe2O3，利用磁电阻和X射线磁线二色谱的方法，发现了上下两层反铁磁之间存在正交耦合现象，建立了以Cr2O3中非均匀畴壁演化为媒介的耦合机制。通过计算畴壁能，得到了和实验结果相符的耦合能温度相关性。反铁磁正交耦合为凝聚态中非共线耦合研究和反铁磁功能器件提供参考。从自旋的纵向传输角度，开发了Pt/α-Fe2O3/Pt垂直器件，通过控制奈尔矢量的方向，实现磁子的打开和关闭。基于磁子的读出过程抑制了器件中的关态信号，实现了高达1000的开关比，突破了反铁磁读出信号小的难题。利用亚铁磁材料Y3Fe5O12，制备了电流驱动磁矩翻转器件，通过电流产生的自旋轨道力矩，实现了反铁磁耦合的亚晶格磁矩沿着两个易轴方向上可循环的面内翻转，促进了对电流驱动磁矩翻转的理解。并通过引入覆盖层，进一步降低了电流密度以及热效应。设计并制备了自旋力矩驱动反铁磁共振器件，利用α-Fe2O3与Y3Fe5O12缓冲层的耦合，并在交变电流的作用下，实现了自旋驱动奈尔矢量共振，通过反铁磁磁阻整流，产生了直流电压信号。通过微磁学模拟进一步揭示了反铁磁共振的物理图像，为电学激发反铁磁共振奠定了基础。结合垂直器件结构和电学操控磁矩，设计了电学操控反铁磁自旋传输的器件结构。首先构筑了电流操控反铁磁磁子纵向传输结构，利用电流产生的自旋轨道力矩改变奈尔矢量和自旋极化的夹角，实现了对磁子能否传输的操控。为了进一步降低功耗，开发了电场操控磁子传输器件Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Y3Fe5O12/Cr2O3/Pt，通过电场产生压电应变，改变了反铁磁Cr2O3的各向异性，实现了电场对磁子通透性的操控。电学方法操控自旋注入磁子传输的方式突破了传统磁场、温度等操控手段的限制，为反铁磁自旋晶体管提供了原型器件参考。

With the rapid development of artificial intelligence and the Internet of Things, human society has gradually entered the era of Internet of Everything intelligence, leading to a rapid increase in the amount of access devices and data, causing escalating device power consumption. Magnetic insulators combine the characteristics of non-volatile random access memory as well as spin-based information transport, and facilitate the achievement of low-power-consumption devices. Antiferromagnetic insulators not only offer the advantages of high density, fast speed and immunity to disturbance, but also combine the low-power-consumption benefit of magnetic insulators. Thus, the interaction of spin and antiferromagnetic insulators is the core of the research field. Based on spin transport in antiferromagnetic insulators, this article demonstrates electrically manipulated antiferromagnetic vertical spin transport by constructing antiferromagnetic longitudinal heterojunctions and electrically manipulating the sublattice magnetic moments of materials with antiferromagnetic coupling.In experiments, all-antiferromagnetic insulator vertical heterostructures α-Fe2O3 /Cr2O3/α-Fe2O3 are designed from the perspective of vertical stacking of antiferromagnetic functional films. It is found that orthogonal interlayer coupling exists between the top and bottom α-Fe2O3 via magnetoresistance and X-ray magnetic linear dichroism mesurements. A coupling mechanism mediated by the evolution of non-uniform domain wall in Cr2O3 is established. By calculating the domain wall energy, the temperature dependence of the coupling energy is obtained. Antiferromagnetic orthogonal coupling provides references for antiferromagnetic functional devices and non-collinear coupling studies in condensed matter. From the perspective of vertical transport of spin current, Pt/α-Fe2O3/Pt vertical devices are developed. The magnon spin current is turned on and off via controlling the direction of Néel vector. The magnon-based readout process suppresses the off-state signal, achieving an on-off ratio ~1000 and breaking through the challenge of small readout signals in antiferromagnetic devices.The current-driven magnetization switching devices are fabricated using Y3Fe5O12 with antiferromagnetic coupling. The sublattice magnetization is found to be cyclically switched between two in-plane easy-axis via spin-orbit torque induced by current, casuing high and low variation of resistance, promoting the understand of current induced magnetization switching. Through introducing a cover layer, the critical current density and the thermal effect are further reduced. The spin torque driven antiferromagnetic resonance devices are designed and fabricated. With the help of coupling between α-Fe2O3 and Y3Fe5O12 buffer, the Néel vector in α-Fe2O3 is driven into resonance via alternating current excitation. Combined with antiferromagnetic resistance rectification, voltage signal is obtained. The antiferromagnetic resonance is further verified by micromagnetic simulation, promoting the understanding of electrically excited antiferromagnetic resonance.Electrically manipulated antiferromagnetic vertical magnon spin transport devices are developed combining vertical devices and electrical control of magnetization. An electric current manipulated antiferromagnetic magnon transport structure is constructed. The angle between Néel vector and spin polarization is changed via spin-orbit torque, realizing the control of magnon spin current transmission. To further reduce power consumption, electrc field manipulated magnon spin current transport device Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Y3Fe5O12/Cr2O3/Pt is developed. The anisotropy of antiferromagnetic Cr2O3 is changed by generating piezoelectric strain through electric field, leading to the control of magnon spin current transport. The electrical method of manipulating magnon spin current transport breaks through the limitations of traditional means such as magnetic field and temperature, providing a prototype device reference for antiferromagnetic spin transistors.