电力电子变流器广泛应用于工业生产领域。电力电子器件作为关键部分，运行中遭受着各种各样的应力，其可靠性会逐渐变差。电力电子器件的应力中最突出的就是热应力。准确、快速监测绝缘栅双极型晶体管（IGBT）的温度并进行热管理对IGBT可靠性的提升具有重要意义。本论文针对目前已有IGBT温度监测方法的不足，探索具有响应快、分辨率高、便于安装的IGBT温度在线监测方法。另外，基于IGBT的温度信息，对IGBT进行热管理，进而提高IGBT及变流器的可靠性。 首先，针对传统方法存在分辨率低、受老化影响且难以实现在线快速监测的问题，选取与温度强线性相关且具有高分辨率的IGBT关断集电极电流变化率di_c/dt为温度表征参数。对IGBT关断集电极电流变化率di_c/dt与温度的关系进行理论推导与实验验证。同时对双脉冲试验平台的温度标定准确度进行分析与验证。 其次，针对IGBT关断di_c/dt在线监测困难的问题，提出了基于IGBT关断集射极电压过冲的器件级IGBT结温监测方法。在IGBT关断时刻，利用IGBT关断di_c/dt在变流器主电路杂散电感上产生的电压尖峰来间接测量关断di_c/dt。通过实验，对该方法的线性度、分辨率、受老化影响情况等关键性能进行测试与验证。同时在不同工况下开展了相关实验验证，进而对该监测方法的标定进行讨论。 再者，针对变流器IGBT结温监测结构复杂的问题，提出了基于直流母线电压振铃的变流器级IGBT结温监测方法。IGBT关断di_c/dt在直流母线上由于杂散电感会产生电压尖峰，以母线电压振铃形式体现出来。对不同IGBT关断时刻对应的母线电压振铃信息进行定位与测量，可以实现所有IGBT的温度监测。通过相应实验对提出的方法进行了验证。另外还讨论了温度监测系统的实现。 最后，针对现有研究对热应力一致性改善的不足，提出基于变流器中IGBT的结温信息进行相应热管理的方法。通过调节PWM变流器的开关频率，改善变换器中器件结温的一致性，平滑IGBT的结温波动。另外，关于热管理策略对变流器输出性能的影响，对其进行了实验测试与分析。 总体而言，本论文提出的IGBT模块温度在线监测与变流器热管理方法具有如下优点：一是所提出的IGBT结温监测方法受IGBT键合线失效等老化的影响较弱，且具有高分辨率；二是所提出的器件级和变流器级结温监测方法可以满足大部分PWM变流器的结温监测需求；三是基于温度信息进行的热管理策略，对变流器的可靠性提升具有重要意义。

Power electronic converters are widely used in industrial applications. As a crucial component, power electronic devices suffer from various stresses during operation, and their reliability will gradually deteriorate. The most prominent stress in power electronic devices is thermal stress. Accurate and rapid monitoring of Insulated Gate Bipolar Transistor (IGBT) temperature and thermal management is of great significance to improve the reliability of IGBT. Aiming at the deficiency of existing IGBT temperature monitoring methods, this paper studies an IGBT online temperature monitoring method with fast response, high resolution, and simple monitoring circuit structure. Besides, based on the temperature of IGBT, thermal management can be conducted to improve the reliability of IGBT and converter. Firstly, to address the problems of low resolution, dependence on aging and difficulty in online monitoring of traditional methods, the IGBT turn-off collector current change rate (di_c/dt) is selected as the temperature-sensitive parameter. IGBT turn-off di_c/dt is strongly linearly correlated with temperature and has a high resolution. The relationship between the turn-off collector current change rate di_c/dt of IGBT and temperature is deduced theoretically and verified experimentally. At the same time, the temperature calibration accuracy of the double pulse test platform is analyzed and verified. Secondly, aiming at the difficulty of online monitoring of IGBT turn-off di_c/dt, a device-level IGBT junction temperature monitoring method based on IGBT turn-off emitter voltage overshoot has been proposed. During the time of IGBT turn-off, the induced voltage generated by IGBT turn-off di_c/dt on the stray inductor of the main circuit of the converter is used to indirectly measure the turn-off di_c/dt. The linearity, resolution, aging effect and other key performance of the method are illustrated with the experiments. At the same time, relevant experiments are conducted at various operation conditions, and the calibration of the monitoring method is discussed. Furthermore, in order to simplfy the structure of IGBT junction temperature monitoring for converter, a converter-level IGBT junction temperature monitoring method based on the DC bus voltage ringing is proposed. The induced voltage is generated by IGBT turn-off di_c/dt due to the stray inductance of the DC bus, and it is closely related to DC bus voltage ringing. The DC bus voltage ringing information corresponding to different IGBT turn-off duration is located and analyzed. The DC bus voltage ringing can be utilized for all IGBT temperature monitoring. The method proposed is verified by experiments. In addition, the implementation of an IGBT junction temperature monitoring system is discussed. Finally, in view of the insufficiency on improving thermal stress consistency of existing research, the thermal management method is proposed based on the IGBT junction temperature information in the converter. By adjusting the switching frequency of PWM converter, the consistency of device junction temperature in the converter is improved, and the fluctuation of IGBT junction temperature is smoothed. In addition, the influence of thermal management strategy on the output performance of the converter is analyzed and illustrated by experiments. In general, the proposed IGBT module temperature monitoring and converter heat management methods have the following advantages. First, the proposed IGBT junction temperature monitoring method is weakly affected by the bond wired degradation and aging and has high resolution. Secondly, the proposed device-level and converter-level junction temperature monitoring method can cover most PWM converter junction temperature monitoring requirements. Thirdly, the heat management strategy based on temperature is of great significance to improve the reliability of the converter.