硅通孔（through silicon via, TSV）技术是集成电路制造中三维封装的核心技术，其能够实现最短和最丰富的垂直方向互连。在TSV晶圆的背面减薄与平坦化工艺中，传统工艺一般采用湿法腐蚀实现铜（Cu）柱的首次露头（1st backside via reveal, 1st BVR），但是该方法存在露头高度不均和损伤大等问题，因此将化学机械抛光（chemical mechanical planarization, CMP）工艺与湿法腐蚀工艺相结合，或直接使用CMP工艺实现1st BVR成为重要的发展趋势。本论文深入探究了抛光液的化学组分对TSV晶圆背面异质结构表面CMP效果的影响，研究了CMP过程中晶圆表面材料去除机理以及CMP后晶圆损伤的形式与规律，提出了控制TSV晶圆CMP后背面质量（如表面形貌、粗糙度和表/界面损伤等）的方法。通过CMP实验探究了基础碱性抛光液的抛光效果，借助原子力显微镜、扫描电镜、电化学工作站等设备，深入研究了抛光液pH值、氧化剂过氧化氢（H2O2）含量和缓蚀剂苯并三氮唑（BTA）含量等参数对CMP过程中晶圆背面TSV异质结构表面化学与物理性质的影响规律与作用机理，并优化与总结了适用的参数值。研究结果表明，使用含与不含H2O2的基础碱性抛光液可以分别实现晶圆异质表面的平坦化与表面Cu、硅（Si）材料的差异化去除，在抛光液中加入5-15mM BTA并将其pH值调节为10.5有助于实现CMP时较好的表面性质并得到高质量的表面。此外，本文进一步研究了TSV晶圆在CMP后的表/界面损伤，借助透射电镜、拉曼光谱仪和半导体器件参数分析仪等设备，探究了损伤的形式与规律。研究结果表明，CMP后晶圆的损伤包括Cu以及Cu与阻挡层交界处的（亚）表面的结构性微损伤、Si（亚）表面应力诱导的非晶层、TSV绝缘层绝缘效果的变化等。通过探究基础抛光液化学组分对损伤的影响，发现在抛光液中加入BTA以及调节其pH值为10.5有助于减小CMP后晶圆的结构性微损伤并提高TSV结构间的绝缘性。在不含H2O2的基础碱性抛光液基础上，探究了分别加入甘氨酸、乙二胺、乙二胺四乙酸二钾、四甲基氢氧化铵等添加剂的抛光液的CMP效果，分析了上述添加剂对CMP时晶圆表面化学与机械作用以及CMP后晶圆表/界面损伤的影响，并揭示了其作用机理。结果表明，上述添加剂可以实现对Cu、Si材料去除的改变以及对CMP后晶圆表面形貌的调节。在此基础上，研究了钼酸钾在含BTA抛光液中的作用，结果表明其可以有效保护晶圆表面，减小CMP后晶圆表/界面的损伤。

Through silicon via (TSV) is one core technology of three dimensional packaging in the integrated circuit manufacturing, which enables the shortest and the most abundant vertical interconnection. In the backside thinning and planarization process of TSV wafers, wet etching is generally used to achieve the 1st backside via reveal (BVR). Due to the problems of BVR by wet etching (such as Cu uneven height, TSV damage, etc.), chemical mechanical planarization (CMP) process has been introduced in to combine with wet etching or to be directly used to achieve the 1st BVR. In this paper, the CMP effects of the chemical components of different slurries on the TSV wafers’ backside heterogeneous surface were investigated, the surface materials’ removal mechanisms during CMP and the micro-damage of wafers after CMP were studied, a method for controlling TSV wafer’s backside surface quality (such as surface topography, roughness, and surface/interface damage, etc.) after CMP was proposed.The polishing effects of the basic alkaline CMP slurries were investigated by CMP experiments. Atomic force microscopy, electrochemical workstation and scanning electron microscopy were used to study the effects of pH value, H2O2 (oxidant) content and BTA (inhibitor) content on the chemical and mechanical properties of TSV wafers’ heterogeneous surface, the mechanisms were analyzed and the applicable parameters of the CMP slurry were optimized and summarized. The results show that flattening of TSV heterogeneous surface and differential removal of Cu and Si on the surface can be realized by using the basic alkaline slurries containing H2O2 and the slurries without H2O2, respectively. Adding 5-15mM BTA to the CMP slurry and adjusting its pH value to 10.5 helps to achieve good surface properties during CMP and to get a high quality surface after CMP.The surface/interface damage of TSV wafers after CMP was further studied. By using transmission electron microscopy, raman spectrometer and semiconductor device parameter analyzer, the damage areas, damage forms and damage laws were explored. The results show that the damage of wafers after CMP includes structural micro-damage from the (sub)surface of Cu and of interface of Cu and barrier layer, stress induced amorphous from the (sub)surface of Si, change of the insulation performance of insulation layer from TSV. By investigating the effects of the basic slurries’ chemical components on the damage, it has been found that adding BTA to the CMP slurry and adjusting its pH to 10.5 helps to reduce the structural damage of TSV wafers and improve the insulation performance between TSV structures after CMP.On the basis of the basic alkaline CMP slurry without H2O2, the CMP effects after adding different complexing or corrosive agents (glycine, ethylenediaminetetraacetic acid dipotassium salt, ethylenediamine, tetramethylammonium hydroxide) were investigated, the chemical and mechanical effects on the surface during CMP and the surface/interface damage of wafers after CMP were analyzed, and the mechanisms were revealed. The results show that the additives above help to change the material removal of Cu and Si as well as to adjust the surface morphology after CMP. On this basis, the effects of potassium molybdate (K2MoO4) in the BTA contained slurries were studied, the results show that the wafers’ surface can be more effectively protected during CMP and the surface/ interface damage of wafers after CMP can be reduced after adding K2MoO4 to the CMP slurries.