有机半导体材料因具有低成本和可低温湿法制备的特点，在大面积、柔性场效应晶体管制备等方面展示出极大的应用潜力。然而，有机场效应晶体管（OFET）迁移率较低、大面积制备时性能一致性差等问题限制了其商业化的应用。针对以上问题，本论文采用马兰格尼与咖啡环效应协同作用，获得高取向性的2,7-二辛基[1]苯并噻吩并[3, 2-b] 苯并噻吩（C8-BTBT）薄膜，制备了高迁移率的有机场效应晶体管。此外，基于此工艺在不同表面能的基片上图案化生长C8-BTBT薄膜，并得到了性能较为一致的阵列晶体管。最后，又对上下双栅结构的晶体管做了工艺上的初步探索。具体工作如下：1. 研究了马兰格尼与咖啡环效应协同作用在氧化铝表面生长C8-BTBT薄膜的提拉、浸润速度和溶液浓度对薄膜有序性和连续性的影响，用偏光显微镜和偏光拉曼光谱等手段对薄膜进行表征，最终得到了高度取向且连续的C8-BTBT薄膜；利用二维掠入射X射线衍射测定薄膜中的π-π堆积取向,得到了取向几乎与提拉方向垂直的结论。将优化后的薄膜制备成场效应晶体管，器件的阈值电压低于-2 V，开关电流比大于104，可靠性因子校准后的迁移率达到23.5 cm2 V-1 s-1。2．采用等离子体处理工艺，改变疏水氟化物薄膜特定区域的表面能，利用基片不同位置的表面能差异，再采用马兰格尼与咖啡环效应协同作用生长出图案化的C8-BTBT薄膜，制备图案化晶体管阵列。通过对生长溶剂的比例进行优化，得到了连续和取向性均优异的薄膜。优化后得到6个晶体管的阈值电压整体低于-2 V，开关电流比大于104，平均迁移率达到7.9 cm2 V-1 s-1。该研究为未来构筑有机场效应晶体管阵列的工艺起到一定指导作用。3. 采用热压印工艺，将绝缘层为聚(4-乙烯基苯酚) （PVP）的底栅顶接触晶体管制成了双栅结构晶体管，并对底层结构的器件在制成双栅结构前后的特性进行对比。结果表明，由于沟道内电荷分布发生变化，导致其阈值电压和开关电流比均发生明显改变。因此，该工作为有机双栅结构器件的工艺研究提供了初步探索，为晶体管阈值电压、开关比的优化提供了参考。
Due to low-cost and low-temperature solution process, organic semiconductor materials have shown great potential for the preparation of organic field effect transistors (OFETs) on large-area, flexible substrates. However, some shortcomings of the OFETs, such as low mobility and poor performance consistency in large-area fabrication, limit its commercial applications. In view of the above problems, in this paper, the synergistic effect of Marangoni and Coffee-ring effect is used to obtain highly oriented 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) thin films to fabricate high mobility organic transistors. In addition, based on this process, C8-BTBT film is patterned on the substrate with different surface energy regions, and an array of devices with relatively uniform performance is obtained. Finally, a preliminary process of a double-gate structure transistor is explored. The main results of this thesis are as follows: 1. The pulling speed and the solution concentration for the formation of C8-BTBT film on alumina surface by the Marangoni and Coffee-ring effect are studied, and the optimized oriented and continuous C8-BTBT film is characterized by polarized light microscope and polarized Raman spectroscopy. The orientation of the π-π stack in the film is determined by two-dimensional grazing incidence X-ray diffraction and it is found that the optimal charge transport direction is perpendicular to the pulling direction. By using the optimized thin film into a field effect transistor, the operating voltage of the device is lower than -2 V, the On/Off ratio is greater than 104, and the mobility factor after calibration reach to 23.5 cm2 V-1 s-1. 2. By using a plasma process to modify the surface energy of a specific region of a fluoride film, a patterned C8-BTBT film array is formed by using Marangoni and Coffee-ring effect. A patterned transistor array is also prepared based on this film array. After optimizing the ratio of solvents in Marangoni and Coffee-ring effect process, a continuous and well-oriented film is obtained. The operating voltages of the 6 transistors are lower than -2 V, the On/Off ratios are greater than 104, and the average mobility is over 7.9 cm2 V-1 s-1. This research provides an important foundation for the process of organic transistor arrays. 3. By thermal imprint process, a bottom gate top contact transistor with gate dielectric of poly（4-vinylphenol）is adopted into a double gate structure transistor. The characteristics of the back-gate device are compared before and after the fabrication of the double gate structure. The results show that the threshold voltage and On/Off ratio are changed due to the changes of the channel charge distribution. This work is expected to provide guidance for the process research of organic double-gate devices.
