刻蚀与沉积是半导体制造中不可或缺的加工方法。等离子体刻蚀和沉积工艺具有加工精度高、反应速率可控性好等优点，已广泛应用于各种半导体器件的制造。等离子体在设备腔室及样品表面的作用机理非常复杂。目前，业界普遍通过大量的对照实验来设定刻蚀与沉积设备的工艺参数，这种方法往往依赖于工程师的经验，开发成本较高，且开发周期较长。通过计算机仿真与工艺实验相结合的方法，可以深入地研究等离子体的作用机理，以更低的时间和经济成本确定工艺参数，并且可助力刻蚀与沉积设备的研发。 本研究使用的仿真软件为ESI-CFD的组件CFD-GEOM/CFD-ACE/CFD-TOPO/CFD-VIEW。我们借助CFD-ACE研究ICP刻蚀机和PECVD设备腔室内等离子体的作用机理，借助CFD-TOPO研究样品表面轮廓的演化，并将仿真结果应用于MEMS和半导体器件的制作。此外，本文完成了对CFD-TOPO的二次开发，用户可根据需要在网页上修改仿真参数，得到相应的仿真结果。 等离子体刻蚀工艺仿真与实验主要包括Cl2/Ar刻蚀硅，CF4刻蚀氧化硅和硅，CHF3刻蚀氧化硅。在腔室仿真中，定量分析了反应粒子的密度、能量和角度分布随工艺参数（射频功率、基板偏压、腔室压强、气体流量）的变化情况。在表面仿真中，模拟了不同尺寸凹槽的刻蚀形貌演化，并与刻蚀实验的结果进行对比，分析特定刻蚀形貌的形成机理。在应用阶段，以CHF3/H2刻蚀氧化硅的仿真为基础，仿真并优化了RRAM器件关键尺寸的刻蚀工艺。 等离子体沉积工艺仿真与实验主要讨论SiH4和NO2沉积氧化硅。在腔室仿真中，讨论了气体流量、压强以及射频功率对腔室内粒子密度分布的影响。在表面仿真中，本文研究了凹槽和拱形曲面的沉积效果。借助仿真分析凹槽和曲面在PECVD沉积前后的形貌变化，探讨工艺参数及样品自身特征对PECVD沉积台阶覆盖性的影响。在应用阶段，基于PECVD沉积的台阶覆盖效果，设计并制作关键尺寸为19nm*45nm的沙漏形纳米孔和7nm凹槽；基于灰度光刻原理以及低曲率拱形曲面沉积的保形效果，制作两种平面和曲面磁膜[Pt/(Co/Pt)*5/Co/Pt和Ta/Co20Fe60B20/Ta]，VSM测试后分析曲面对薄膜磁性能的影响。
Both etching process and deposition process are indispensable parts in semiconductor industry. Due to the great advantages of plasma etching/deposition process, such as high accuracy, controllable reaction rate, it has been widely used in the fabrication of various semiconductor devices. The generation and reaction mechanism of plasma is extremely complicated in the chamber of the equipment. The reaction mechanism of plasma on the surface of the sample is complicated as well. At present, the engineers always do a series of controlled experiments to get reasonable reaction parameters in the fabrication process. However, this development method depends on the experience of engineers, thus it takes a lot of time and money. Based on the simulation/calculation of computer and the experiment，the mechanism of plasma can be studied in-depth with less cost. Thus, this method can be applied to deduce the reaction parameters of plasma etching and deposition, meanwhile, it can play a part in the development of etching and deposition equipment. In this research, the simulation work was done by ESI-CFD, which contains CFD-GEOM, CFD-ACE, CFD-TOPO and CFD-VIEW. The reaction mechanism of plasma in the chamber of ICP and PECVD equipment was simulated by CFD-ACE. The evolution of the surface profile was simulated by CFD-TOPO. The simulation was applied in the fabrication of MEMS and semiconductor devices. In addition, re-develop of CFD-TOPO has been finished, users can modify the simulation parameters on the web page according to their needs and get the simulation results. In plasma etching process, the simulations and experiments of the etching of silicon in Cl2/Ar & CF4 and the etching of silicon oxide in CF4 & CHF3 were discussed. In the simulation of the chamber model, the correlation between the reaction parameter (RF power, pressure in the chamber, gas flow rate) and the density of the particles was analysed quantitatively. In the simulation of the surface model, the surface evolution of trenches in different size in plasma etching was studied. Then the results of simulation were compared with the experimental results, and the formation mechanism of some specific etching morphology was studied and summarized. In the phase of application, the etching process in the fabrication of RRAM was studied based on the simulation of the plasma etching of silicon oxide in CHF3/H2. In plasma deposition process, the simulation and experiment of the deposition of silicon oxide in SiH4/N2O were discussed. In the simulation of the chamber model, the correlation between the reaction parameter (RF power, bias voltage, pressure in the chamber, gas flow rate) and the density of the particles was analysed. In the simulation of the surface profile, the trenches and curved surface was deposited with silicon oxide by PECVD. The step coverage feature of PECVD was analyzed based on the surface evolution of trenches and curved surfaces in the deposition process. Inspired by the step coverage feature, hourglass-shaped nanopores with dimensions of 19 nm*45 nm and trenches with 7 nm in critical size were fabricated. Based on gray-scale lithography and good deposition uniformity on the curved surface with low curvature, two types of magnetic material [Pt/(Co/Pt)*5/Co/Pt and Ta/Co20Fe60B20/Ta] were deposited on the planar and curved surfaces by magnetron sputtering, respectively. The magnetic properties of these films were tested by VSM and analysed carefully.
