本文针对新型铜互连阻挡层钌的化学机械抛光（CMP）过程中尚未解决的难题，系统地研究了铜和钌在以高碘酸钾（KIO4）为氧化剂的抛光液中的材料去除机理及抛光液pH值对摩擦腐蚀特性的影响，并从微观角度探索了铜/钌界面电偶腐蚀的产生及扩展机制，以寻求有效的腐蚀抑制手段。综合运用表面化学分析、电化学实验、CMP实验等多种研究手段，全面研究了铜和钌在KIO4抛光液中材料去除机理。结果表明，铜和钌在抛光过程中，化学-机械交互作用为材料去除的主导因素。当使用弱碱性抛光液时，铜和钌容易获得最佳抛光效果。在此情况下，铜表面膜具有CuO/Cu(IO3)2·nH2O/Cu-高碘酸盐/CuI化学成分，而钌的表面覆盖异质成分RuO2·2H2O/RuO3膜结构。在弱碱性抛光液中，铜和钌表面膜钝化特性好，机械强度较低，容易被摩擦力去除，摩擦腐蚀作用较为明显，因此可以获得较高的抛光速率和较为理想的表面质量。结合摩擦化学实验和CMP-电化学实验，研究了铜和钌在KIO4溶液中的摩擦腐蚀特性，结果表明：摩擦腐蚀产生的本质是机械摩擦过程造成去钝化区/钝化区的局部电偶腐蚀；摩擦力作为外界能量输入到体系中，分别促进铜和钌表面腐蚀过程的阳极和阴极反应，从而加速腐蚀；在碱性抛光液中，铜和钌的摩擦腐蚀特性较为明显，主要是由抛光液对流和机械磨损促进的腐蚀二者效果的叠加。用微观、原位的方法研究铜/钌界面电偶腐蚀机理。结果表明，铜/钌界面在KIO4溶液中的电偶腐蚀主要分为三个阶段：电偶腐蚀免疫阶段，铜表面自然氧化层的钝化作用在腐蚀初期防止铜进一步腐蚀；电偶腐蚀加速阶段，铜表面自然氧化膜破裂，铜的腐蚀速率迅速增加，反应生成大量不溶于水的Cu(IO3)2·nH2O，最初从铜/钌界面生成，并迅速覆盖至整个铜表面；电偶腐蚀稳定阶段，不溶于水的Cu(IO3)2·nH2O再次充当腐蚀的屏障，使铜的腐蚀速率变缓并趋于稳定。使用电化学方法研究不同氧化剂、缓蚀剂对电偶腐蚀速率的影响。结果表明：相比于H2O2，KIO4作为氧化剂时，铜/钌之间电偶腐蚀速率更低；BTA和1, 2, 4-三氮唑均具有较高的腐蚀抑制效率，为抑制铜/钌电偶腐蚀有效的缓蚀剂。BTA-K2MoO4为适用于KIO4抛光液的复合缓蚀剂，腐蚀抑制作用主要通过MoO42-在金属表面吸附，提高化学反应活化能的同时，增强了MoO42--BTA的物理吸附作用，同时生成不溶性钼酸盐增强表面钝化膜的致密性。此复合缓蚀剂不仅可以抑制铜/钌结构的电偶腐蚀，而且有助于获得较好的铜、钌异质材料的选择性去除。

During the chemical mechanical polishing (CMP) process of the integrated circuit using Ruthenium (Ru) as novel barrier layer material, there still exist many unsettled problems. To solve the remaining critical issues during the CMP process, a systematic research work has been carried out in this thesis. The tribocorrosion properties and the material removal mechanism of Copper (Cu) and Ru in KIO4-based slurry were firstly investigated. The Cu/Ru galvanic corrosion was then studied from a new micro and in-situ perspective, and on this basis, ways to mitigate corrosion using different slurry additives were subsequently sought for. With a combination of the surface chemistry analysis, electrochemical experiments, and CMP test methods, the material removal mechanism of Cu and Ru was comprehensively investigated. Results show that for both Cu and Ru, the predominant material removal mechanism is the chemical-mechanical synergestic effect. When weak alkaline slurry is used during the barrier polishing process, an inhomogeneous CuO/Cu(IO3)2·nH2O/Cu-periodate/CuI passive film is formed on Cu, while RuO2·2H2O/RuO3 on Ru. The surface films have good passivation property and weak mechanical strength, which result in a significant mechanical accelerated chemical effect during polishing. Therefore, under weak alkaline condition, ideal polishing results could be achieved, i.e., a better surface quality, and a good material removal selectivity between Cu and Ru.CMP-chemical experiments combined with the traditional tribocorrosion experients were conducted to investigate the tribocorrosion properties of Cu and Ru. Results show that the nature of tribocorrosion phenomenon is the galvanic corrosion between the mechanical abrasion induced depassivation area and the passivation area on metal surface. The external mechanical energy is imported into the system, accelerating the anodic reaction of Cu corrosion and cathodic reaction of Ru corrosion, respectively. When using alkaline slurry during CMP, there is obvious tribocorrosion effect for Cu and Ru, which are caused by both the convection enhanced corrosion and the mechanical abrasion enhanced corrosion. The generation and development of galvanic corrosion within the Cu/Ru couple was studied from an in-situ and micro perspective mainly using the scanning probe microscopy methods. The development of Cu/Ru micro-galvanic corrosion could be divided into three stages: (1) the galvanic corrosion immune stage, the Cu surface is passivated by the native oxide layer formed in the air, which could prevent Cu from the accelerated corrosion; (2) Cu corrosion accelerating stage, the breakdown of the native oxide layer results in the sharply accelerated corrosion of Cu, and simultaneously large amount of insoluble reaction product Cu(IO3)2·nH2O initiates from the Cu/Ru interface and spreads to the whole Cu surface within a short period; (3) galvanic corrosion stabilization stage, the insoluble Cu(IO3)2·nH2O acts as the corrosion obstruction again, decelerating the corrosion of Cu, and the galvanic corrosion is stabilized henceforward. The effects of different oxidants and corrosion inhibitors on the galvanic corrosion within Cu/Ru couple were investigated by electrochemical methods based on the principle of galvanic corrosion meter. It is proved that compared with hydrogen peroxide, the galvanic corrosion rate is lower when using KIO4 as the oxidant. Benzotriazole (BTA) and 1,2,4-triazole are effective galvanic corrosion inhibitors with high corrosion inhibition efficiency. Apart from this, BTA-potassium molybdate (K2MoO4) are effective compound corrosion inhibitors in KIO4-based slurry. MoO42- preferentially adsorbs on metal surface, increasing the activation energy of the electrode reactions. Meanwile, the compound corrosion inhibitors could enhance the physical adsorption of MoO42--BTA passivation film, with insoluble molybdate salts deposited in the gaps, improving the surface passivation property. Not only could the compound corrosion inhibitors effectively suppress the galvanic corrosion within Cu/Ru coupling, but also achieve good material removal selectivity between Cu and Ru.