透明导电氧化物薄膜因其具有较高的电导率、可见光透过率较高，在太阳能电池、液晶显示等领域应用广泛。ITO（Sn掺杂InO）薄膜是其中最性能最好的一种而得到广泛的应用。然而，按照目前的消耗量，世界上In的储量只能使用18年。另外，ITO薄膜具有毒性，易脆以及在还原性气氛中不稳定等缺点，因此目前需要寻找一种新型透明导电薄膜。AZO（Al掺杂ZnO）薄膜是一种可替代的材料。它具有原料丰富，无毒，在红外区透明度高等优点，因而可被应用在太阳能电池上。但是，相比于ITO薄膜，AZO薄膜的导电性略显不足，有待提高。本实验利用直流磁控溅射法和溶胶-凝胶法制备AZO透明导电薄膜。我们研究溅射电流、本底真空和退火温度等因素对薄膜电学性能的影响。经优化改进后，AZO透明导电薄膜的电阻率达到3.4×10-4 Ω?cm，绝对透光率达到90%。研究不同的薄膜退火温度、Al3+掺杂浓度等条件对AZO透明导电膜微观形貌、电学及光学性能的影响。结果表明，退火温度、Al3+掺杂浓度和预热处理温度都会对薄膜的电性能、光性能产生影响。经优化改进制备的AZO透明导电薄膜的电阻率达到1.7×10-3 Ω?cm，绝对透光率达到94%。比较使用磁控溅射和溶胶凝胶法制备的AZO薄膜之间的差异，分析其能级结构，并将这两种方法制备的AZO薄膜作为的透明电极制作钙钛矿型太阳能电池，获得3.6%的光电转换效率。

Transparent conductive oxide films have been widely used in solar cells, liquid crystal displays, and other technologies because of their high conduc-tivity and high visible light transmittance. ITO (indium-doped tin oxide) is one of the most commonly used transparent conductive films for its excellent performance. However, the world supply of indium, a component of the ITO film, is projected to be drained in only eighteen years if current con-sumption levels are maintained. Furthermore, ITO is toxic, fragile, and un-stable in reducing ambient. The unsuitability of ITO for tomorrow’s world motivates the search for new materials and new material hybrids that can be used as transparent electrodes. Aluminum-doped zinc oxide (AZO), another metal oxide, is a popular alternative to ITO. AZO is abundant and nontoxic, with greater transparency in infrared, a feature that is appealing for solar applications. However, AZO struggles to match ITO’s electrical properties.In this study, Aluminum doped Zinc Oxide (AZO) transparent conduc-tive films are prepared via the DC sputtering and the sol-gel method and spin coating. We study the effect of changing base vacuum pressure, target current and annealing temperature. Using optimized conditions, we prepared an AZO transparent conductive film with a resistivity of 3.4 × 10-4 Ω?cm and a transmittance of approximately reached 90%.We study the effect of changing the film annealing temperature and Al3+ doping concentration on AZO transparent conductive film morphology, elec-trical and optical properties. The results show that the annealing temperature and Al3+ doping concentration have an important effect on the electrical and optical properties of the film. Using optimized conditions, we prepared an AZO transparent conductive film with a resistivity of 1.7 × 10-3 Ω?cm and a transmittance of approximately reached 94%.We compare the differences and study the energy level alignment of the AZO transparent conductive films prepared by DC sputtering and sol-gel methods. With AZO prepared by these two methods as the transparent elec-trode of the perovskite solar cells, the PCE of 3.6% was achieved.