登录 EN

添加临时用户

光纤激光器用石英光纤端面的研磨、抛光实验研究

Experimental Research on Grinding and Polishing End face of Silica Fiber for Fiber Laser

作者:顾欣
  • 学号
    2003******
  • 学位
    硕士
  • 电子邮箱
    gux******.cn
  • 答辩日期
    2006.12.22
  • 导师
    雒建斌
  • 学科名
    机械设计及理论
  • 页码
    75
  • 保密级别
    公开
  • 馆藏号
    07013106
  • 培养单位
    013 精仪系
  • 中文关键词
    光纤激光器;化学机械抛光;二氧化铈抛光液;光纤端面;研磨
  • 英文关键词
    fiber laser;chemical-mechanical polishing;CeO2 slurry;fiber end face;grinding

摘要

光纤是光纤激光器的核心部件之一。石英光纤端面的加工处理,对于提高光纤的激光损伤阈值、提高激光泵浦耦合效率、进而提高高功率光纤激光器的输出功率起着重要的作用。本课题将化学机械抛光(CMP)技术引入光纤端面的处理过程,满足了技术需要,并从实验的角度详细研究了光纤端面的研磨、抛光工艺。具体内容包括: 1,用石英玻璃材料与超声钻孔技术制作了一种光纤夹具,设计了夹装方式与磨抛方法。通过优选抛光参数,获得了表面光洁、无缺陷与划痕、AFM下Ra为0.326nm、边缘塌陷小于30nm的光纤端面。 2,进行了光纤端面机械研磨的研究,对不同磨粒粒径的金刚石研磨纸,在充分润滑、半润滑与干磨三种不同润滑状态下的研磨效率与端面质量做了实验研究,并对几种研磨参数的影响做了理论分析。 3,进行了光纤端面的CMP抛光实验研究,主要选用二氧化铈为抛光液,进行了二氧化铈的分散性研究;抛光液pH值、浓度对抛光性能影响的研究;多种抛光过程物理参数(抛光压力、抛光盘转速、抛光液流速等)对抛光性能影响的研究;以及抛光垫的选用和氢氟酸后处理等多项研究。并对实验结果做了理论分析。

Silica fiber is a kernel part of fiber laser. The treatment of the end face of silica fiber is quite significant for the increase of the laser damage threshold, the improvement of the coupling efficiency of laser pump, and the enhancement of the output power of the high-power fiber laser. In this thesis, CMP (Chemical-mechanical polishing ) is applied to fabricate the end face of fiber. The process of grinding and polishing of the end face of fiber is studied in the following ways: (1) A fiber clamping apparatus made of fused silica was designed and fabricated by using hyperacoustic drilling. A smooth end face with roughness of 4.81 nm was achieved (0.362nm by AFM) by using the jig and the optimized parameters. No defect can be found on the polished surface and the edge retraction of end face is less than 30nm. (2) The influence of particle size of diamond lapping film on the grinding effect was studied. Experiments were carried out under fully lubrication, partial lubrication, and dry lapping conditions respectively. (3) CeO2 slurry was used to polish the end surface of fiber. The dispersion ability of CeO2 was investigated. The influence of pH value of slurry , the concentration of CeO2 slurry, the type of polishing pad, and the polishing parameters (such as polishing pressure, rotation speed, flowing rate of polishing slurry) on the polishing quality was studied. The disposal of HF acid of the end surface after polishing was also studied.