化学机械抛光（CMP）是集成电路制造的一个关键工艺步骤。随着晶圆尺寸增加至300mm，对CMP全局平坦化效果的要求越来越高。目前人们对CMP机理的认识多集中在晶圆表面材料的去除机理，而对全局平坦化机理的研究很少。本文在CMP装备研发和在线测量系统研制的基础上，以流体作用为切入点，对300mm晶圆CMP过程抛光接触面的流体润滑行为和晶圆状态进行系统的实验研究，为工业CMP过程晶圆平坦化机理研究奠定基础。主要研究工作如下： 针对300mm晶圆CMP装备研制了直驱抛光盘系统，并自主研发了一套可在线监测抛光动态过程晶圆表面流体压力分布、晶圆变形、晶圆姿态和抛光接触面流体准膜厚的集成在线测量系统，建立了抛光接触面过程参量的在线检测技术，为抛光过程的认识和抛光机理的研究提供了技术和实验手段。 利用所研发的在线测量系统，对工业CMP过程晶圆表面流体压力分布及其承载特性进行了深入的实验研究，发现了流体压力分布以出口区正压为主、入口区负压为辅的新特性，并分析揭示了该特性的内在机理，定量研究表明流体压力可承载10%~30%的抛光下压力，证实了CMP过程的流体润滑为混合润滑；另外，系统研究了CMP基础工艺参数对抛光过程晶圆表面流体压力分布的影响规律，所取得的结论可为CMP工艺优化提供重要参考依据。 研究了300mm晶圆在静态加载和动态抛光下的变形特征，发现在均匀下压力作用下晶圆会发生10μm量级的微小凸变形，且进一步探讨了抛光下压力及分区压力配置对晶圆变形和晶圆表面流体压力分布的影响规律，发现晶圆变形程度随着下压力的增加而增加，随边缘下压力和保持环压力的增加而减小，凸变形晶圆更有利于流体动压的形成，并分析了晶圆变形对流体压力分布的影响机理，研究结果为CMP抛光头分区压力参数设置和调整提供了重要依据。 提出了晶圆姿态与流体准膜厚的概念及相应的在线测量方法，发现了抛光过程晶圆相对于抛光垫存在量级在10-5~10-4度的俯仰角和侧倾角以及14~20μm流体膜厚的现象，且研究表明抛光工艺参数对晶圆俯仰角的影响规律与流体压力相应规律一致，从而揭示了晶圆姿态对流体动压润滑的重要作用。

Chemical mechanical polishing (CMP) is the crucial process for the manufacture of integrated circuits (IC). As the wafer size increases to 300mm, higher and higher demands are put forward for the global planarization. Till now, studies of the mechanism of CMP are mainly focused on the material removal of the wafer surface, while the mechanism of the global planarization has not been investigated adequately. Based on the research and development of CMP equipment and the integrated in-situ measurement system, and taking the fluid action as the key point, this dissertation addresses systematic experimental studies on the interfacial fluid lubrication behavior and on the wafer status during the CMP process of 300mm wafer, which provides the groundwork for the study of the planarization mechanism of CMP. A direct drive platen system is developed for the CMP equipment of 300 mm wafer, furthermore, an integrated in-situ measurement system is developed, which can measure the fluid pressure distribution, the wafer bending, the wafer orientation and the proximate fluid film thickness online during the dynamic polishing process. This system establishes the process parameter monitoring technique for the polishing interface, which provides technical and experimental means for the study of the polishing process and the polishing mechanisms. Using the in-situ measurement system, the fluid pressure distribution on the wafer surface and the fluid loading characteristic are experimentally investigated in depth for the industrialized CMP process. New feature of the positive-dominated and negative-auxiliary fluid pressure distribution is observed, and the mechanisms of this feature are revealed. Quantitative studies indicate that the fluid pressure can support 10%~30% of the downforce, which confirms that mixed-lubrication is formed at the wafer-pad interface. In addition, effects of the basic process parameters on the fluid pressure at the wafer-pad interface are investigated systematically, the conclusions of which can provide important guidance for the optimization of the CMP process parameters. The deformation characteristics of the 300mm wafer under the condition of the static loading and the dynamic polishing are studied respectively. The results reveal that there exists a slightly convex wafer bending by the order of 10μm under uniform downforce. Furthermore, the effects of the downforce and the configuration of the zone pressure on the wafer bending and the fluid pressure distribution are investigated. The results suggest that the wafer bending increases with the downforce, and decreases with the wafer edge pressure and the retainer ring pressure, the convex deformation of the wafer is better for the formation of the hydrodynamic pressure, and the mechanism of the effect of wafer bending on the fluid pressure distribution is analyzed, the results provide important reference for the configuration and adjustment of the zone pressure parameters of the wafer carrier. The concepts of the wafer orientation and the proximate fluid film thickness and their corresponding measurement methods are proposed. The results reveal that the wafer has a pitch angle and a rolling angle both on the order of 10-5~10-4 degree relative to the polishing pad, and there exists a fluid film with the thickness of 14~20μm at the interface. The effect of the process parameters on the pitch angle is accordant with that on the fluid pressure, which indicates that the wafer orientation plays an important role in the hydrodynamic lubrication of CMP.